Apple has reportedly requested Samsung to revamp the iPhone DRAM memory design to boost AI capabilities. The company is said to be working to switch to a discrete packaging method for the low-power DRAM used in iPhones.
TheElec reports that the new iPhone DRAM design change by Samsung aims to meet the growing need for memory bandwidth driven by on-device AI and foldable phones.
Samsung’s new discrete packaging method places memory independently next to the system-on-chip. It allows better heat dissipation and more I/O pins, potentially boosting AI capabilities.
Meanwhile, it may not fully meet the iPhone’s needs for low communication latency. The company is also likely to implement the next-gen LPDDR6-PIM standard for enhanced AI performance.
As Mobile AI evolves, Apple seems to have realized the continuously increasing requirement of high bandwidth memory on the iPhone to seamlessly run AI tasks and generative processing.
That said, Apple has opted for discrete packaging, which it has used in Macs and iPads. This method ensures memory is placed alone next to the SoC, allowing for more I/O pins and flexibility.
In discrete packaging, there is a larger surface area for heat to dissipate, and the heat generated by the SoC and memory does not overlap, which is generated during generative AI processing.
Apple reportedly aims to switch iPhone LPDDR to a discrete package format starting in 2026. The company apparently plans to separate LPDDR DRAM memory from the system semiconductor.
Previously, LPDDR was vertically stacked on top of the system chip in the PoP configuration. It is used in mobile memory to enable smaller IC designs compared to horizontal packaging.
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